«The table shows that Germanium has much higher electron and hole mobility, carrier lifetime and their free-path lengths, but its forbidden zone width is considerably lower. It is also known that voltage drop is 0.1 — 0.3 V across the p-n junction and 0, 6 — 0,7 V across the n-p junction and we can safely conclude that Germanium conducts current much better than Silicon does. Therefore Germanium amplification stage loses less energy than the similar Silicon stage».